Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (approximate to 8 cm(2) V-1 s(-1)) nanocrystalline In2O3 thin-film transistors (TFTs) on a flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on an Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to approximate to 0 V for enhancement-mode operation.