Advanced Materials, Vol.27, No.42, 6689-6689, 2015
Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom
The dielectric response and electrical properties of junctions based on self-assembled monolayers (SAMs) of the form S(CH2)(11)X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000-fold increase in the tunneling rate and a fourfold increase of the dielectric constant (epsilon(r)) with increasing polarizability of X are found.