Advanced Materials, Vol.27, No.42, 6612-6612, 2015
Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors
Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type a-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transitionmetal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.