We report ambipolar organic field effect transistors (OFETs) andcomplementaryinverters based on polyazine containing diketopyrrolopyrrole (PBTDAZ).PDBTAZ OFETs showed well-balanced electron and hole mobilities of 0.13and0.12cm(2)/(V center dot s) at a low annealing temperature of 100(o)C using bottom-contact, top-gate geometry with a CYTOP(TM)gate dielectric layer. The mobilities were improved to 0.56cm(2)/(V center dot s) by thermal annealing (150 degrees C). The ambipolar complementary-inverter-based PDBTAZ OFETs showedideal V(inv)near half ofV(DD)with a high gain of 15 similar to 20 due the well-balanced electron and hole mobilities.