A low-operating voltage and high performance polymeric field effect transistors using octadecylphosphonic acid-treated high-k AlOx and HfO2 hybrid dielectrics were demonstrated. High-k metal oxide hybrid dielectrics were prepared by oxygen plasma treatment of deposited Al film for AlOx and by spin coating of solution-processable HfO2 sol-gel solution for HfO2 in combination with phosphoric acid-based self-assembled monolayer (SAM), resulting in high capacitance (10nF/cm(2) for SiO2, 600nF/cm(2) for AlOx and 580nF/cm(2) for HfO2). With phosphoric acid-based SAM on high-k metal oxide and thermal annealing of thieno[3,2-b]thiophene-based conducting polymer, the device performance was significantly enhanced. The highest mobility of the transistors using ODPA-treated AlOx as a gate dielectric is 2.3 x 10(-2) cm(2) V-1 s(-1) in the saturation region with the source-drain of -2V. In ODPA-treated HfO2 hybrid dielectric, the saturated mobility is 1.1 x 10(-2) cm(2) V-1 s(-1) and the threshold voltage was measured to be -0.31V, which is at least one order lower than SiO2 hybrid dielectric (-3V).