In this study, in an effort to increase the surface Ga contents of Cu(In,Ga)Se-2 absorber, a high Ga-containing sputter target (Cu-30 at%Ga) was used to produce a precursor and was compared with Cu-22 at%Ga target in terms of photovoltaic performances of completed solar cells. The precursors consisted of multi-stack of CuGa/In and were selenized by using Se vapor at 530 degrees C. The higher efficiency was obtained from the high Ga target with substantial improvement of open-circuit voltage and short-circuit current density. The increased hole concentration with more Ga addition in the absorber was found to be responsible for the higher open-circuit voltage.