In this paper we have studied a low-temperature process of fabricating zinc oxide (ZnO) thin-film transistors (TFTs) on polyethylene terephthlate (PET) substrate. PET film has a lower glass transition temperature (Tg = 120 degrees C) than costly Polyethersulphone (PES) film (Tg = 230 degrees C). Therefore we applied a low-temperature cross-linked poly-vinylphenol (c-PVP) process to annealing at 110 degrees C instead of the conventional c-PVP process (annealing at 165 degrees C). The resulting TFTs based on oxide fabricated by the low-temperature process were similar in electrical characteristics to conventional TFTs. In addition, the ZnO TFTs fabricated by the low-temperature process exhibited a field-effect mobility of 0.075 cm(2)/Vs, a threshold voltage of 15 V and an on/off ratio of 1.7 x 10(5) respectively.