The process for depositing indume-tin oxide (ITO) electrode on polymer substrate is not readily applicable at high temperature and shows poor electrical properties than the conventional ITO deposition process on glass substrate. Especially, the deformation of polymer substrate and residual stress yield the crack which degrade the performance of organic light emitting diode (OLED) unit. In this study, we developed low resistance ITO electrode, AZO(ITO-ZnO-Ag-ZnO-ITO) to apply to the fabrication of the bottom emission OLED unit. The performance of the AZO exhibited low surface resistance as 8ohm and the ITO electrodes were additionally deposited to guarantee the same work function as conventional ITO. The emissive efficiency was 92% at 550nm which almost corresponds to that of the conventional ITO.