We fabricated organic field-effect transistors (OFETs) consisted of vacuum-sublimed boron-subphthalocyanine film. The device characteristics were evaluated in a glove box (O-2 < 1ppm, H2O < 1 ppm) condition. The OFETs showed typical n-type characteristics and the field-effect electron mobilities were estimated to be 5.4 x 10(-5) cm(2) /V (.) s for Ca source-drain electrodes and 1.2 x 10(-5) cm(2) /V (.) s for Au source-drain electrodes. In the case of the OFET with Au source-drain electrodes exposed to ambient air for a few minutes, a clear conversion from n-type to p-type behavior was also observed.