The electrical and structural properties of V/p-GaNSchottky barrier diode (SBD) have been investigated as a function of annealing temperature. The Schottky barrier height (SBH) of the as-deposited contact is found to be 0.82 eV (I-V) and 1.10 eV (C-V). However, it is noted that the SBH increases for the contact annealed at 400 degrees C and the values are 0.94 eV (I-V) and 1.21 eV (C-V). Further, with increasing annealing temperature up to 500 degrees C, the SBH decreases to 0.92 eV (I-V) and 1.19 eV (C-V). Also, the rectification ratio of the V/p-GaN SBD is evaluated for as-deposited and annealed contacts. The electrical parameters of the V/p-GaN SBD are also discussed with Cheung's and Norde functions. It is noted that the interface state density decreases upon annealing at 400 degrees C and then slightly increases after annealing at 500 degrees C. Results reveal that the superior electrical characteristics are obtained for the contact annealed at 400 degrees C. The electrical results are also correlated with the interfacial microstructure of the contacts. The AES and XRD results reveal that the formation of nitride phases at the interface may be the reason for the increase of SBH after annealing at 400 degrees C. The formation of gallide phases at the interface may be reason for the decrease in the SBH. (C) 2015 Elsevier B.V. All rights reserved.