20 nm thick Pd coatings deposited on Si substrates with 800 nmSiO(2) and 1 nm Cr buffer layers were treated in a 2.45 GHz microwave plasma source at 700 W plasma power and 40 Pa working pressure without substrate heating. For obtaining information on the effect of energy influx due to ion energy on the palladium films the substrate potential was varied from U-sub= 0 V to -150 V at constant gas flow corresponding to mean ion energies Ei from 0.22 eV.cm(-2).s(-1) to 1.28 eV.cm(-2).s(-1). In contrast to high pressure reactions with metallic Pd, under plasma exposure we do not observe solid solutions over a wide range of hydrogen concentration. The hydrogen incorporation in Pd films takes place discontinuously. At 0 V substrate voltage palladium hydride is formed in two steps to PdH0.14 and PdH0.57. At - 50 V substrate voltage PdH0.57 is formed directly. However, substrate voltages of -100 V and -150 V cause shrinking of the unit cell. We postulate the formation of two fcc vacancy palladium hydride clusters PdHVac(I) and PdHVac(II). Under longtime plasma exposure the fcc PdHVac(II) phase forms cubic PdH1.33. The fcc PdH0.57 phase decomposes at temperatures >300 degrees C to formmetallic fcc Pd. The hydrogen removal causes a decrease of lattice defects. In situ high temperature diffractometry measurements also confirm the existence of PdHVac(II) as a palladium hydride phase. Stoichiometric relationship between cubic PdH1.33 and fcc PdHVac(II) becomes evident from XR measurements and structure considerations. We assume both phases have the chemical composition Pd3H4. Up to 700 degrees C we observe phase transformation between both the fcc PdHVac(II) and cubic PdH1.33 phases. These phase transformations could be explained analog to a Bain distortion by displacive solid state structural changes. (C) 2015 Elsevier B.V. All rights reserved.