Inductively coupled plasma (ICP) etching of phase change material W(0.0)3Sb(2)Te (WST) films is studied using Cl-2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness are investigated, respectively. The etch rate is found proportional to the ICP power but inversely proportional to the flow of BCl3. The etching profile is related to gas ratio and bias power. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched WST shows accumulation of low volatility WClx and SbClx on the etched surface. (C) 2015 Published by Elsevier B.V.