This paper presents Si-Ge-Csuperlattices (SLs) strained to Si that have direct band-gaps across a wide range of energies in the Infra-Red, dipole matrix elements larger than 1E-3, and oscillator strengths larger than 1E-1. Due to their constituents, these SLs will be able to be monolithically integrated with CMOS, thereby enabling efficient light emission and light absorption devices such as Light Emitting Diodes (LEDs), LASERs, and Photo-Diodes, in close proximity to CMOS devices. Key applications include Silicon Photonics, Multispectral CMOS Image Sensors, and Wide Spectrum Photo Voltaic Cells, among others. (C) 2015 Published by Elsevier Ltd.