In the present study, the effect of processing conditions (melt quench followed by sintering) on the structure, thermal and conducting properties is investigated of undoped and doped Bi4V2O11 - delta. Both quenched and sintered samples were characterized by various techniques. High conducting disordered gamma-phase is stabilized at lower dopant concentration than earlier reported values. The thermal stability of the samples increases with increase in dopant concentration. Activation energies are found in the range 0.70-1.15 eV. The conductivity increases up to x = 0.05 dopant concentration. After that, as dopant concentration increases, the conductivity decreases. A maximum value of conductivity similar to 4.07 x 10(-3) S/cm at 600 degrees C is observed for the x = 0.05 sintered sample. (C) 2015 Elsevier B.V. All rights reserved.