By taking advantage of spectrally broad resonances, nanocavity-enhanced a-Ge:H solar cells with an absorber layer thickness below 20 nm can reach current densities similar to micron-thick mu c-Si:H devices. However, as nanocavity-enhanced devices are highly reliant on interference effects, further spectrally narrow resonance patterns are generated if an additional top cell is added to form a multijunction solar cell. This may complicate the integration of a-Ge:H nanocavity solar cells in tandem devices. We show that conventionally textured TCO substrates can be employed to suppress the top cell induced interferences, while the required broadband resonance of the a-Ge:H bottom cell nanocavity is maintained. This approach is realized in an a-Si:H/a-Ge:H tandem solar cell with an only 20 nm thick a-Ge:H bottom cell absorber. The spectrally broad quantum efficiency curve of the bottom cell corresponds to a photocurrent density of 12.3 mA cm(-2), which is comparable to values reached in micromorph devices. (C) 2015 Elsevier B.V. All rights reserved.