In this paper, we present a new, updated version of the commonly used semiconductor device simulator PC1D named PC1Dmod 6.1. The new program is based on the previously published command line version cmd-PC1D 6.0, which has implemented several new options related to the device physics, but now uses an updated version of the original PC1D graphical user interface. The program thus provides the possibility for using Fermi Dirac statistics and a selection of state-of-the-art models for crystalline silicon, including injection-dependent band gap narrowing, carrier mobility and Auger recombination, in a familiar setting. Version 6.1 also has implemented the recently published band gap narrowing model by Yan and Cuevas, which is based on empirical studies of a large selection of both n(+) and p(+) emitters, in addition to Schenk's model. It has also implemented the mobility model for compensated material by Schindler et al. Finally, the maximum number of nodes, time steps and wavelengths have been increased in order to reduce unnecessary constraints on simulations and external files. The results from the PC1Dmod 6.1 simulations have been compared with those of other simulation tools and with previously published data to verify the correct implementation of the new models. Emitter saturation currents calculated using PC1Dmod 6.1 showed an excellent agreement with those obtained using the emitter recombination calculator EDNA 2, and the new program was able to successfully reproduce previously published experimental data and previous implementations of the models. Both PC1Dmod 6.1 and the command line version cmd-PC1D 6.1 are open source software, and are freely available for download. (C) 2015 Elsevier B.V. All rights reserved.