Potential-induced degradation (PID) in photovoltaic (PV) modules based on n-type single crystalline Si solar cell (front junction cell) was experimentally generated by applying negative voltage from an Al plate, which was attached on the front cover glass of the module, to the Si cell. The solar energy-to-electricity conversion efficiency of the standard n-type Si PV module decreased from 17.8% to 15.1% by applying -1000 V at 85 degrees C for 2 h. The external quantum efficiency in the range from 400 to 600 nm significantly decreased after the PID test, although no change was observed from 800 to 1100 nm. PID in n-type Si PV modules can be basically explained by enhanced front surface recombination between electron and hole on the Si cell, whereas the polarity of voltage leading to PID depends on structure of Si cell. An ionomer encapsulant instead of EVA has significantly suppressed PID in n-type Si PV modules. (C) 2015 Elsevier B.V. All rights reserved.