Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.14, No.14, 1004-1006, 1995 DOI10.1007/BF00274632 Export Citation Studies on Deep Levels in GaAs Epilayers Grown on Si by Metal-Organic Chemical-Vapor-Deposition .3. 0.78 and 0.84 eV Photoluminescence Emissions Zhao JL, Gao Y, Liu XY, Dou K, Huang SH, Yu JQ, Liang JC, Gao HK Keywords:SEMI-INSULATING GAAS;MOLECULAR-BEAM EPITAXY;LOW-TEMPERATURES;LUMINESCENCE;EXCITATION Please enable JavaScript to view the comments powered by Disqus.
