Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.13, No.8, 563-565, 1994 DOI10.1007/BF00592609 Export Citation Effect of Ultraviolet Illumination on the Charge Trapping Behavior in Sinx/InP Metal-Insulator-Semiconductor Structure Provided by Plasma-Enhanced Chemical-Vapor-Deposition Kim CH, Han IK, Lee JI, Kang KN, Kwon SD, Choe B, Park HL, Her J, Lim H Keywords:RICH SILICON-NITRIDE;INSTABILITIES;STATES;FILMS Please enable JavaScript to view the comments powered by Disqus.
