The growth kinetics and desorption behavior of indium (In) atoms grown on high index Si(112) surface at different substrate temperatures has been studied. Auger electron spectroscopy analysis revealed that In growth at room temperature (RT) and high substrate temperature (HT) similar to 250 degrees C follows Frank van der Merve growth mode whereas at temperatures >= 450 degrees C, In growth evolves through Volmer-Weber growth mode. Thermal desorption studies of RT and 250 degrees C grown In/Si(112) systems show temperature induced rearrangement of In atoms over Si(112) surface leading to clusters to layer transformation. The monolayer and bilayer desorption energies for RT grown In/Si(112) system are calculated to be 2.5 eV and 1.52 eV, while for HT-250 degrees C the values are found to be 1.6 eV and 1.3 eV, respectively. This study demonstrates the effect of temperature on growth kinetics as well as on the multilayer/monolayer desorption pathway of In on Si(112) surface. (C) 2015 Elsevier Ltd. All rights reserved.