C-60 films grown on Si (001) by vacuum evaporation were implanted with 100 keV positive arsenic ions to various doses in the range 1 x 10(13) to 1 x 10(15) ions/cm(2). The structural properties of the implanted films were studied using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS results indicate the formation of arsenic buried layer within C-60 film leading to the anisotropy stress in the film. XRD results reveal the preferential orientation of the film along the (531) plane on implantation and it can be due to the re-alignment of the grains as evidenced by our AFM measurement. AFM measurements also reveal the reduction in the grain size and the surface roughness on implantation.