Cerium nitride films were deposited by ion plating in an electron-beam sustained Ce are discharge in a nitrogen atmosphere. The crystal structure was strongly affected by the are discharge current and the substrate temperature. The lattice spacing of CeN film is 0.5020 nm with a density of 7.82 g cm(-3). This film showed a paramagnetic property at 10 K in a magnetic field of 20 kOe. The Knoop hardness for CeN film is over 1600. The electrical resistivity was 4.6 x 10(-4) Omega cm with p-type conductivity. The carrier concentration of the CeN film increased after exposure to the air, which suggested that the valence of Ce in CeN is probably 4+.