Europium (Eu) doped Ga2O3 films were deposited on sapphire substrates by pulsed laser deposition (PLD) with varying Eu contents at substrate temperature as low as 500 degrees C. Energy dispersive spectroscopy results show that films with different Eu contents can be obtained by changing the Eu composition in the targets. X-ray diffraction and Raman spectra analysis indicate that all films have the monoclinic structure with a preferable (-201) orientation. The films exhibited high transmittance more than 90% in the visible region and 80% in the UV region. Intense red emissions at 613 nm due to the transitions from D-5(0) to F-7(2) levels in Eu were clearly observed for the Eu doped Ga2O3 films, suggesting PLD is a promising method for obtaining high quality Eu doped Ga2O3 films at low growth temperature. (C) 2015 Elsevier B.V. All rights reserved.