Thin films of PbZr0.53Ti0.47O3 have been prepared from diol-based sols. Films up to 1 mu m thick could be produced by applying a single coating on to platinized silicon substrates. A number of processing variables ranging from sol composition through to firing conditions have been examined, and their effects on film microstructure and electrical properties evaluated. Control of the lead stoichiometry was found to be of critical importance in determining dielectric and ferroelectric parameters. Values of remanent polarization and coercive field of 22-27 mu C cm(-2) and 40-45 kV cm(-1), respectively, could be obtained by compensating for PbO lost by volatilization during firing; corresponding relative permittivity values were 800-1000.