Journal of Materials Science, Vol.30, No.4, 980-988, 1995
R-Curves of an Yttria-Doped and Alumina-Doped Hot-Pressed Silicon-Nitride Ceramic at 1200-Degrees-C and Room-Temperature
An energy approach has been utilized to measure the R-curves of an Y2O3-Al2O3-doped hot-pressed silicon nitride ceramic at 1200 degrees C in an argon atmosphere in three-point bending. In order to evaluate the R-curves at 1200 degrees C, a low constant displacement rate of delta = 5 mu m min(-1) was applied in cyclic loading to obtain the cyclic loading/unloading-displacement curves during controlled-crack propagation. Propagated crack lengths were measured directly by a microscope and they were compared to compliance-calculated crack lengths. After digitizing the cyclic load-displacement and crack length-displacement curves, crack-resistance parameters, R-curves and K-curves, were calculated by computer. At 1200 degrees C this material behaved non-elastically and the crack parameters, obtained here, represent the non-elastic ones. For comparison, at room temperature, continuous loading was applied to obtain the load-displacement curves. At room temperature, linear-elastic fracture mechanics behaviour was observed.