In the work, Cu2O films were prepared by middle frequency (mf) magnetron sputtering and subsequent anneals. CuO phase has been detected in a few Cu2O samples and its influences have been examined. The results show that the CuO phase can lead to a decrease of Hall mobility and change the surface morphology of the Cu2O films. The highest hall mobility of 43 cm(2) V-1 s(-1) with the optical band gaps of about 2.5 eV has been achieved in the Cu2O films where CuO is absent, which demonstrates the potential to fabricate high field-effected mobility Cu2O-based devices through this method. (C) 2015 Elsevier B.V. All rights reserved.