N(E) C KVV Auger spectra (V= sigma(s)sigma(p)pi) were used for measurement of the pi-band electron occupation of five outer layers on freshly cleaved bulk HOPG. The pi-band electron occupation of the 1-5 graphene layers was measured relative to the electron concentration in the sigma(p)-band. In-depth pi-band profiles were obtained by means of variation of the Auger electron takeoff angle within the range of 15-90 degrees. Differences in the pi-band electron occupation of the 1-5 graphene layers were determined. The pi-band electron occupation varies from 0 at the top graphene layer to that of the pi-band electron occupation typical for bulk HOPG at the 5th graphene layer counted from the outer surface. These results are discussed on the basis of the pi-band formation under the interlayer interaction of the p(z)-electrons. (C) 2015 Elsevier B.V. All rights reserved.