In this work, Nb-doped TiO2 films were deposited on glass substrates utilizing RF magnetron co-sputtering with a TiO2 target and a Nb target. In order to study the effect of Nb concentration, four groups of films with different Nb concentration were prepared and annealed in N-2 at 500 degrees C. Crystal structure, surface morphology, electrical and optical property of the films were characterized. The lowest resistivity was measured to be 1.2 x 10(-3) Omega cm at the Nb concentration of 7.0 at.%. Meanwhile, Hall mobility and carrier density were 2.0 cm(2)/Vs and 2.6 x 10(21) cm(-3), respectively. (C) 2015 Elsevier B.V. All rights reserved.