By codoping with a donor-acceptor pair through a two-step chemical method we have succeed to obtain p-type ZnO thin films on glass. Firstly, a thin undoped ZnO seed layer was deposited by sol-gel method followed by the deposition of In-N codoped ZnO film obtained through the hydrothermal technique. The influence of post-deposition annealing temperature (100 degrees C, 300 degrees C and 500 degrees C) on the samples was investigated from a structural, chemical, morphological and optoelectrical point of view. X-ray diffractometry (XRD), infrared ellipsometry and X-ray photoelectron spectroscopy (XPS) analyses have confirmed the codoped nature of the ZnO thin films. The XRD pattern analysis has established the films have wurtzite nanocrystalline structure, the crystallite sizes varying between 10 nm and 13 nm with the annealing temperature. Continuous and homogenous films with nanorods surface morphology has been obtained, as visualized by scanning electron microscopy measurements. Hall Effect measurements have established that all samples, regardless of annealing temperature, showed p-type conduction due to the successful incorporation of nitrogen in the film, with the highest carrier concentration registered at 500 degrees C. This is in good correlation with the nitrogen content in the films as revealed from XPS. In all samples, the XPS depth profiling has shown a nitrogen gradient with higher elemental concentration at the surface. (C) 2015 Elsevier B.V. All rights reserved.