A carbon tetrabromide (CBr4) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO2/Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr4 precursor. Thus, CBr4 precursor is a new alternative candidate for use in the mass production of graphene. (C) 2015 Elsevier B.V. All rights reserved.