DC Reactive Magnetron Sputtering법에 의한 Ti-Al-V-N 박막의 성장거동

손용운; 정인화; 이영기; Yong-Un Sohn; In-Wha Chung; Young-Ki Lee

Korean Journal of Materials Research, Vol.9, No.7, 688-694, July, 1999

Export Citation

DC Reactive Magnetron Sputtering법에 의한 Ti-Al-V-N 박막의 성장거동

Growth behavior of Ti-Al-V-N Films Prepared by Dc Reactive Magnetron Sputtering

손용운, 정인화, 이영기¹

한국자원연구소 활용연구부
¹위덕대학교 반도체공학과

Yong-Un Sohn, In-Wha Chung, and Young-Ki Lee¹

Minerals & Materials processing Division, Korea Institute of Geology, Mining & Materials(KIGAM), Taejon 305-350, Korea
¹Dept. of Semiconductor Engineering, Uiduk University, Kyongju 780-910, Korea

초록

Ti-6Al-4V 합금을 타겟트로 사용하여 유리 기판위에 dc reactive magnetron sputtering법으로 N 2 /(Ar+N_2)비,기전력및시간등의여러가지증착조건에서Ti?6Al?4V?N필름을증착하였고,각각의증착조건에따른결정구조및우선방위거동은X?선회절장치를사용하여조사하였다.Ti?6Al?4V?N필름은본질적으로fcc결정구조의 \delta?TiN에Al과V이결함으로서고용된변형된형태의 \delta?TiN구조이고,TiN의격자상수(4.240)보다작은값을나타내었는데,이는Ti(1.47)에비하여상대적으로원자반경이작은Al(1.43)과V(1.32)이Ti의격자위치에치환된결과이다.그리고Ti?6Al?4V?N필름은 _N2$ 가스 분압이 감소됨에 따라 (111) 우선방위 성장거동을 하였을 뿐만아니라 증착시간의 증가에 따라 뚜렷한 (111) 우선방위 성장거동을 나타내었다. 그리고 증착속도 및 결정입도의 거동 또한 여러 가지 증착 조건에 크게 의존한다.

i-6Al-4V-N films have been grown onto glass substrates by dc reactive magnetron sputtering from a Ti-6Al-4V-N alloy target at different nitrogen partial pressure, input powers and sputtering times. The influence of various sputtering conditions on structural properties of Ti-6Al-4V-N films was investigated by measuring their X-ray diffraction. The quaternary Ti-6Al-4V-N film is crystallizing in a face centered cubic TiN structure, the lattice parameter is smaller than the TiN parameter as titanium atoms of the TiN lattice are replaced by aluminum and vanadium atoms. The films show the (111) preferred orientation and the (111) peak intensity decreases as the nitrogen partial pressure is increased, but the intensity increases as the sputtering time is increased. The deposition rate and the grain size are alto related with the variation of various sputtering conditions.

[References]

Knotek O, Reimann H, Bosch W, Metall., 37, 233 (1983)
Munz WD, Hofmann D, Hartig K, Thin Solid Films, 96, 79 (1982)
Munz WD, Hofmann D, Metalloberflache, 37, 279 (1983)
Knotek O, Bosch W, Met. Powder Rep., 39, 406 (1984)
Marchwicka GB, Stepniewska LK, Posadowski W, Thin Solid Films, 82, 313 (1981)
Knotek O, Bosch W, Leyendecker T, J. Vac. Sci. Technol., A4, 2695 (1986)
Munz WD, J. Vac. Sci. Technol., A4, 2717 (1986)
Jehn HA, Hofmann S, Ruckborn VE, Munz WD, J. Vac. Sci. Technol., A4, 2701 (1986)
Knotek O, Munz WD, Leyendecker T, J. Vac. Sci. Technol., A5, 2173 (1987)
Knotek O, Leyendecker T, Jungblut F, Thin Solid Films, 153, 83 (1987)
Knotek O, Flasing R, Atzor M, Prengel HG, Wear, 133, 189 (1989)
Cullity BD, Elements of X-ray Diffraction(2nd Edition) (1978)
Jeitschko W, Nowotny H, Benesovsky F, Monatsh. Chem., 94, 1198 (1963)
Schuster JC, Bauer J, J. Solid State Chem., 53, 260 (1984)
Sohn YU, et al., To be publicated (1999)
Sundgren JE, J. Vac. Sci. Technol., A4, 2295 (1986)
Lee YK, Sohn YU, Cho YS, Kim YS, Kim SY, J. of the Korean Society for Heat Treatment, 8, 137 (1995)
Massey HSW, Burhop EHS, Electronic and Ionic Impact Phenomena, 1-2, 126 (1969)
Lewis MA, Glocker DA, Jorne J, J. Vac. Sci. Technol, A7, 1019 (1989)
Pelleg J, Zerin LZ, Lungo S, Thin Solid Films, 197, 117 (1991)
Glocker DA, IOP, A3012 (1995)
Lee DN, J. Mater. Sci., 24, 4375 (1989)

[1] Knotek O, Reimann H, Bosch W, Metall., 37, 233 (1983)

[2] Munz WD, Hofmann D, Hartig K, Thin Solid Films, 96, 79 (1982)

[3] Munz WD, Hofmann D, Metalloberflache, 37, 279 (1983)

[4] Knotek O, Bosch W, Met. Powder Rep., 39, 406 (1984)

[5] Marchwicka GB, Stepniewska LK, Posadowski W, Thin Solid Films, 82, 313 (1981)

[6] Knotek O, Bosch W, Leyendecker T, J. Vac. Sci. Technol., A4, 2695 (1986)

[7] Munz WD, J. Vac. Sci. Technol., A4, 2717 (1986)

[8] Jehn HA, Hofmann S, Ruckborn VE, Munz WD, J. Vac. Sci. Technol., A4, 2701 (1986)

[9] Knotek O, Munz WD, Leyendecker T, J. Vac. Sci. Technol., A5, 2173 (1987)

[10] Knotek O, Leyendecker T, Jungblut F, Thin Solid Films, 153, 83 (1987)

[11] Knotek O, Flasing R, Atzor M, Prengel HG, Wear, 133, 189 (1989)

[12] Cullity BD, Elements of X-ray Diffraction(2nd Edition) (1978)

[13] Jeitschko W, Nowotny H, Benesovsky F, Monatsh. Chem., 94, 1198 (1963)

[14] Schuster JC, Bauer J, J. Solid State Chem., 53, 260 (1984)

[15] Sohn YU, et al., To be publicated (1999)

[16] Sundgren JE, J. Vac. Sci. Technol., A4, 2295 (1986)

[17] Lee YK, Sohn YU, Cho YS, Kim YS, Kim SY, J. of the Korean Society for Heat Treatment, 8, 137 (1995)

[18] Massey HSW, Burhop EHS, Electronic and Ionic Impact Phenomena, 1-2, 126 (1969)

[19] Lewis MA, Glocker DA, Jorne J, J. Vac. Sci. Technol, A7, 1019 (1989)

[20] Pelleg J, Zerin LZ, Lungo S, Thin Solid Films, 197, 117 (1991)

[21] Glocker DA, IOP, A3012 (1995)

[22] Lee DN, J. Mater. Sci., 24, 4375 (1989)