액상 구리 전구체 hfac (hexafluoroacetylacetonate) Cu(I) DMB (3,3-dimethyl-1-butene)의 특성 평가

이시우; 강상우; 한상호; Shi-Woo Rhee; Sang-Woo Kang; Sang-Ho Han

Korean Journal of Materials Research, Vol.9, No.11, 1148-1152, November, 1999

Property of hfac(hexafluoroacetylacetonate) Cu(I) DMB (3,3-dimethyl-1-butene) as a Liquid Precursor for Chemical Vapor Deposition of Copper Films

이시우, 강상우, 한상호¹

포항공대 화학공학과 정보전자재료화학연구실
¹포항공대 나노테라소재화학

Shi-Woo Rhee, Sang-Woo Kang, and Sang-Ho Han¹

Laboratory for Advanced Materials Processing, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea
¹Nano-Tera Materials, Incorporated, Pohang University, Pohang, Korea

초록

본 연구에서는 기존에 알려진 구리 전구체와 새롭게 개발된 전구체인 hfac (hexafluoroacetylacetonate) Cu(I) DMB (3,3-dimethyl-1-butene)를 비교 평가해보았다. (Hfac)Cu(I) (DMB)의 증가압은 40 ? C 에서 3 torr 정도로 기존에 잘 알려진 (hfac)Cu(I) vinyltrimethylsilane (VTMS) 보다 10배 정도 높은 것으로 나타났으며 그럼에도 불구하고 상당히 안정하여 65 ? C 에서 일주일 이상 가열하여도 변하지 않았다. 이 전구체로 100- 280 ? C 에서 구리 박막을 증착할 수 있었으며 150- 250 ? C 온도 범위에서 2.0 μΩ -cm의 순수한 구리 박막을 얻었다. 구리 박막의 증착 속도는 기존의 전구체보다 7~8배 정도 높은 것으로 나타났다.

An organometallic precursor, hfac(hexafluoroacetylacetonate) Cu(I) DMB (3,3-dimethyl- 1-butene) was synthesized, evaluated and compared with other precursors for metal organic chemical vapor deposition of copper thin films. It was found that at 40 ? C , the vapor pressure was an order of magnitude higher (about 3 torr) than (hfac) Cu vinyltrimethylsilane (VTMS) and films could be deposited at the substrate temperature of 100- 280 ? C with deposition rate substantially higher. The copper films contained no detectable impurities as measured by Auger electron spectroscopy and had a resistivity of about 2.0 μΩ -cm in the deposition temperature range of 150 to 250 ? C . From the thermal analysis, (hfac)Cu(I)(DMB) is believed to be quite stable and no appreciable amount of precipitation was observed at 65 ? C heating for more than a month.

[References]

Hampden-Smith MJ, Kodas TT, Polyhedron, 14, 699 (1995)
Yoen HY, Park YB, Rhee SW, J. Mater. Sci.: Mater. Electron., 8, 189 (1997)
Park MY, Son JH, Kang SW, Rhee SW, J. Mater. Res., 14(3), 975 (1999)
Cohen SL, Liehr M, Kasi S, J. Vac. Sci. Tech. A, 10, 863 (1992)
Kang SW, Han SH, Rhee SW, Thin Solid Films, 247, 1 (1999)
Doppelt P, Coord. Chem. Rev., 178-180, 1785 (1998)
Doppelt P, Chen TY, Madar R, Torres J, Acvanced Metallization Conference, 213 (1998)
Park MY, Son JH, Rhee SW, Electrochem. Solid-State Lett., 1, 32 (1998)
Son JH, Park MY, Rhee SW, Thin Solid Films, 335(1-2), 229 (1998)
Kang SW, Park MY, Rhee SW, Electrochemical and Solid-State Letters, 2, 22 (1999)
Baum TH, Larson CE, J. Electrochem. Soc., 140(1), 154 (1993)
Reynolds SK, Smart CJ, Baran EF, Baum TH, Larson CE, Brock PJ, Appl. Phys. Lett., 59, 2332 (1992)
Choi ES, Park SK, Shin HK, Lee HH, Appl. Phys. Lett., 68(7), 1017 (1996)
Doyle G, Eriksen KA, Van Engon D, Organometallics, 4, 830 (1985)

[1] Hampden-Smith MJ, Kodas TT, Polyhedron, 14, 699 (1995)

[2] Yoen HY, Park YB, Rhee SW, J. Mater. Sci.: Mater. Electron., 8, 189 (1997)

[3] Park MY, Son JH, Kang SW, Rhee SW, J. Mater. Res., 14(3), 975 (1999)

[4] Cohen SL, Liehr M, Kasi S, J. Vac. Sci. Tech. A, 10, 863 (1992)

[5] Kang SW, Han SH, Rhee SW, Thin Solid Films, 247, 1 (1999)

[6] Doppelt P, Coord. Chem. Rev., 178-180, 1785 (1998)

[7] Doppelt P, Chen TY, Madar R, Torres J, Acvanced Metallization Conference, 213 (1998)

[8] Park MY, Son JH, Rhee SW, Electrochem. Solid-State Lett., 1, 32 (1998)

[9] Son JH, Park MY, Rhee SW, Thin Solid Films, 335(1-2), 229 (1998)

[10] Kang SW, Park MY, Rhee SW, Electrochemical and Solid-State Letters, 2, 22 (1999)

[11] Baum TH, Larson CE, J. Electrochem. Soc., 140(1), 154 (1993)

[12] Reynolds SK, Smart CJ, Baran EF, Baum TH, Larson CE, Brock PJ, Appl. Phys. Lett., 59, 2332 (1992)

[13] Choi ES, Park SK, Shin HK, Lee HH, Appl. Phys. Lett., 68(7), 1017 (1996)

[14] Doyle G, Eriksen KA, Van Engon D, Organometallics, 4, 830 (1985)