La 1?x Sr x MnO 3?δ   (0.19 ≤  x ≤  0.31) 박막의 결정구조 및 전기전도 특성

허현; 임세주; 조남희; H. Heo; S.J. Lim; N.H. Cho

Korean Journal of Materials Research, Vol.10, No.6, 437-444, June, 2000

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La 1?x Sr x MnO 3?δ (0.19 ≤ x ≤ 0.31) 박막의 결정구조 및 전기전도 특성

Crystal Structure and Electrical Transport Characteristics of La 1?x Sr x MnO 3?δ (0.19 ≤ x ≤ 0.31) Thin Films

허현, 임세주, 조남희

인하대학교 재료공학부

H. Heo, S.J. Lim, and N.H. Cho

Dept. of Materials Science and Engineering, Inha University, Korea

초록

기판온도, 박막조성 및 증착후 열처리 등의 조건에 따른 La 1?x Sr x MnO 3?δ (0.19 ≤ x ≤ 0.31) 박막의 결절구조와 전기전도 특성을 조사하였다. 스퍼터법을 이용하여 500 ? C 에서 증착된 박막은 강한 우선배향성과 유사정방정(pseudo-tetrag-onal, a/c-=0.97) 결정체를 나타냈다. 이러한 박막의 단위포는 산소분위기 내에서 증착후 열처리에 의하여 입장정 결정계로 변하였다. La 0.67 Sr 0.33 MnO 3 조성의 주타겟과 La 0.3 Sr 0.7 MnO 3 조성의 보조타겟을 동시에 이용하여 박막의 조성을 조절하였다. 보조타겟의 개수에 따라 박막내의 Sr 함량(x)은 0.19-0.31 범위의 값을 나타내었으며, x값이 0.19로부터 0.31로 증가시 금소-반도체의 전이 온도가 상승하였고, 전지비저항이 대체로 감소하였다. 0.18 T의 자기장 하에서, La 0.69 Sr 0.31 MnO 3 조성의 박막의 자기저항변화 MR((%) = ( ρ o ?ρ H /ρ H )는 약 390% 이었다.

We investigated the effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystal structure and electrical transport of La 1?x Sr x MnO 3?δ (0.19 ≤x≤ 0.31) thin films. As-prepared La 1?x Sr x MnO 3?δ films grown at 500 ? C by sputter techniques were found to have the pseudo-tetragonal system(a/c=0.97) and a highly preferential orientation. The films were changed to be of the cubic system by post-deposition annealing at around 900 ? C . A main target of La 0.67 Sr 0.33 MnO 3 as well as auxliary targets of La 0.3 Sr 0.7 MnO 3 ceramics were co-sputtered to control the chemical composition of the film. The Sr content(x) of the film ranged from 0.19 to 0.31, depending on the number of the auxiliary target. When x increased from 0.19 to 0.31, the electrical resistivity of the film decreased and the transition temperature between metal and semiconductor shifted to higher temperature. With a magnetic field of 0.18 T, the magneto-resistance ratio (MR(%) = ( ρ o ?ρ H /ρ H ) of the La 0.69 Sr 0.31 MnO 3 thin film was about 390%.

Keywords:magnetorsistive effects;crystal structure;sputtering;TEM;thin films

[References]

Van Dover RB, Phys. Rev., 47(10), 6134 (1993)
Jin S, McCormack M, Tiefel TH, Ramesh R, J. Appl. Phys., 76(10), 6929 (1994)
Rao CNR, Mahesh R, Raychaudhuri AK, Mahendiran R, J. Phys. Chem. Solids, 59(4), 487 (1998)
Zener C, Phys. Rev., 82, 403 (1951)
Millis AJ, Littlewood PB, Shraiman BI, Phys. Rev. Lett., 74(25), 5144 (1995)
Hwang HY, Phys. Rev. Lett., 75(5), 914 (1995)
Zhao GM, Hunt MB, Conder K, Keller H, Muller KA, Physica C, 202, 282 (1997)
Garcia-Landa B, Ibarra MR, De Teresa JM, Zhao G, Conder K, Keller H, Solid Satate Commun., 105(9), 567 (1998)
Zhou JS, Goodenough JB, Asamitsu A, Tokura Y, Phys. Rev. Lett., 79(17), 3234 (1997)
Kwon C, Robson MC, Kim KC, Gu JY, Lofland SE, Bhagat SM, Trajanovic Z, Rajeswari M, Venkatesan T, Kratz AR, Gomez RD, Ramesh R, J. Magn. and Magn. Mater., 172, 229 (1997)
Ju HL, Sohn H, J. Solid State Commun., 102(6), 463 (1997)
Pickett WE, Singh DJ, Phys. Rev. B, 53(3), 1146 (1996)
Hawlcy ME, Adams CD, Arendt PN, Brosha EL, Garzon FH, Houlton RJ, Hundley MF, Heffner RH, Jia QX, Ncumeier J, Wu XD, J. Crystal Growth, 174, 455 (1997)
Doolittle LR, Nucl. Inst. Meth. B, 9, 334 (1985)
Huang TC, Lim G, Parmigini F, Kay E, J. Vac. Sci. Technol. A, 3(6), 2161 (1985)
Raveau B, Maignan A, Martin C, Herview M, Materials Research Society, 321 (1998)
Sun JZ, Elbaum LK, Gupta A, Xiao G, Duncombe PR, Parkin SSP, IBM J. Res. Develop., 42(1), 89 (1998)
Xiao G, Gong GQ, Canedy C, J. Appl. Phys., 81(8), 5324 (1997)
Dai P, Zhang J, Mook HA, Foong F, Liou SH, Dowben PA, Plummer EW, Solid State Commun., 100(12), 865 (1996)
Singhal SC, Iwahara H, Singhal SC(ed.), Solid Oxide Fuel Cells, 93-4, 205 (1993)
Schuster R, Roder H, Bromann K, Brune H, Kern K, Phys. Rev., B54(19), 13476 (1996)
Benabbas T, Francois P, Androussi Y, Lefebvre A, J. Appl. Phys., 80(5), 2763 (1996)
Eckert J, Stucky GD, Cheetham AK, MRS Bulletin, 24(5), 31 (1999)
Archibald W, Zhou JS, Goodenough JB, Phys. Rev., B53, 14445 (1996)
Saitoh T, Bocquet AE, Mizokawa T, Namatame H, Fujimori A, Phys. Rev., B51(20), 13942 (1995)
Rao CN, Cheetham AK, Science, 276(5314), 911 (1997)
Kalechofsky N, Tsui YK, Reichenbach H, McGinn P, J. Appl. Phys., 81(12), 8115 (1997)
Damay F, Martin C, Maignan A, Ravequ B, J. Magn. and Magn. Mater., 183, 143 (1998)

[1] Van Dover RB, Phys. Rev., 47(10), 6134 (1993)

[2] Jin S, McCormack M, Tiefel TH, Ramesh R, J. Appl. Phys., 76(10), 6929 (1994)

[3] Rao CNR, Mahesh R, Raychaudhuri AK, Mahendiran R, J. Phys. Chem. Solids, 59(4), 487 (1998)

[4] Zener C, Phys. Rev., 82, 403 (1951)

[5] Millis AJ, Littlewood PB, Shraiman BI, Phys. Rev. Lett., 74(25), 5144 (1995)

[6] Hwang HY, Phys. Rev. Lett., 75(5), 914 (1995)

[7] Zhao GM, Hunt MB, Conder K, Keller H, Muller KA, Physica C, 202, 282 (1997)

[8] Garcia-Landa B, Ibarra MR, De Teresa JM, Zhao G, Conder K, Keller H, Solid Satate Commun., 105(9), 567 (1998)

[9] Zhou JS, Goodenough JB, Asamitsu A, Tokura Y, Phys. Rev. Lett., 79(17), 3234 (1997)

[10] Kwon C, Robson MC, Kim KC, Gu JY, Lofland SE, Bhagat SM, Trajanovic Z, Rajeswari M, Venkatesan T, Kratz AR, Gomez RD, Ramesh R, J. Magn. and Magn. Mater., 172, 229 (1997)

[11] Ju HL, Sohn H, J. Solid State Commun., 102(6), 463 (1997)

[12] Pickett WE, Singh DJ, Phys. Rev. B, 53(3), 1146 (1996)

[13] Hawlcy ME, Adams CD, Arendt PN, Brosha EL, Garzon FH, Houlton RJ, Hundley MF, Heffner RH, Jia QX, Ncumeier J, Wu XD, J. Crystal Growth, 174, 455 (1997)

[14] Doolittle LR, Nucl. Inst. Meth. B, 9, 334 (1985)

[15] Huang TC, Lim G, Parmigini F, Kay E, J. Vac. Sci. Technol. A, 3(6), 2161 (1985)

[16] Raveau B, Maignan A, Martin C, Herview M, Materials Research Society, 321 (1998)

[17] Sun JZ, Elbaum LK, Gupta A, Xiao G, Duncombe PR, Parkin SSP, IBM J. Res. Develop., 42(1), 89 (1998)

[18] Xiao G, Gong GQ, Canedy C, J. Appl. Phys., 81(8), 5324 (1997)

[19] Dai P, Zhang J, Mook HA, Foong F, Liou SH, Dowben PA, Plummer EW, Solid State Commun., 100(12), 865 (1996)

[20] Singhal SC, Iwahara H, Singhal SC(ed.), Solid Oxide Fuel Cells, 93-4, 205 (1993)

[21] Schuster R, Roder H, Bromann K, Brune H, Kern K, Phys. Rev., B54(19), 13476 (1996)

[22] Benabbas T, Francois P, Androussi Y, Lefebvre A, J. Appl. Phys., 80(5), 2763 (1996)

[23] Eckert J, Stucky GD, Cheetham AK, MRS Bulletin, 24(5), 31 (1999)

[24] Archibald W, Zhou JS, Goodenough JB, Phys. Rev., B53, 14445 (1996)

[25] Saitoh T, Bocquet AE, Mizokawa T, Namatame H, Fujimori A, Phys. Rev., B51(20), 13942 (1995)

[26] Rao CN, Cheetham AK, Science, 276(5314), 911 (1997)

[27] Kalechofsky N, Tsui YK, Reichenbach H, McGinn P, J. Appl. Phys., 81(12), 8115 (1997)

[28] Damay F, Martin C, Maignan A, Ravequ B, J. Magn. and Magn. Mater., 183, 143 (1998)