플라즈마 공정 변수가 TiO 2± δ  박막 형성에 미치는 영향

박상기; 강봉주; 이원희; 이재갑; S.G. Park; B.J. Kang; W.H. Lee; J.G. Lee

Korean Journal of Materials Research, Vol.10, No.11, 732-737, November, 2000

Export Citation

플라즈마 공정 변수가 TiO 2± δ 박막 형성에 미치는 영향

Dependence of the Formation of TiO 2± δ Films on Plasma Process Variables

박상기, 강봉주, 이원희, 이재갑

국민대학교 금속재료공학부

S.G. Park, B.J. Kang, W.H. Lee, and J.G. Lee

School of Metallurgical and Material Engineering, Kookmin University, 861-1, Jeongneung-Dong, Chongnung-dong, Songbuk-gu, Seoul, 136-702, Korea

초록

TEMAT/H 2 플라즈마를 이용하여 TiO 2± δ 를 증착하였다. Power를 300W에서 500W로 증가시켜 고 밀도 플라즈마를 형성시킨 경우에는 Ti 함유량이 크게 증가하였고, 무시할 정도의 C, N이 함유되었다. 기판에 bias를 가한 경우에도 Ti 양이 증가되면서, 증착률이 크게 증가되었다. 또한 매우 적은 양의 H 2 O( 10 ?4 Torr) 는 TEAMT[tetrakis (ethylmethylamido) titanium] 분해를 효율적으로 이루어 주어 C, N의 양을 크게 감소시키면서 TiO 2 에 요구되는 충분한 O을 제공하였다. 결과적으로 플라즈마 반응에 의하여 생성된 Ti 양이온이 TiOx 박막형성에 주요한 기여를 하고 있으며, 고 밀도 플라즈마의 사용은 Ti 양이온 생성을 크게 증가시켜 주고, 분위기 중에 존재하는 미량의 수분이 TEMAT 분해 효율성을 크게 하여 TiO 2 박막증착을 이루고 있다.

Plasma enhanced chemical vapor deposition of TiO 2$± δ has been carried out using TEMAT [tetrakis(ethylmethylamido) titanium] and H 2 . Increasing the power from 300 W to 500 W produced the high density plasma, leading to the formation of TiO 2 films with an increased ratio of Ti to O and a negligible amount of C and N. Applying the bias of 30W to the substrate in creased the growth rate of the film with a slightly increased content of Ti in the film. In addition, H 2 O was from either the residual gas in the gase pressure or H 2 (/He) gas and actively participated in the formation of TiO 2 films. Consequently, Ti ions created in the plasma could be a main contributor to TiO 2 formation with a slight amount of H 2 O( 10 ?4 Toor) in the ambient, which provided the dissociation of TEMAT.

Keywords:MOCVD;TEMAT;high density plasma

[References]

Shin HK, Shin HJ, Lee JG, Kang SW, Ahn BT, Chem. Mater., 9, 76 (1997)
Eizenberg M, Littau K, Ghanayem S, Mak A, Maeda Y, Chang M, Sinha AK, Appl. Phys. Lett., 65(19), 2416 (1994)
Yun JH, Park MY, Rhee SW, J. Vac. Sci. Technol. A, 16(2), 419 (1998)
Hwang ES, Lee J, J. Vac. Sci. Technol. B, 16(6), 3015 (1998)
Cohen SL, Liehr M, Kasi S, App. Phys. Lett., 60(1), 50 (1992)
Kim S, Park JM, Choi DJ, Thin Solid Films, 320(1), 95 (1998)
Charatan RM, Gross ME, Eaglesham DJ, J. Appl. Phys., 76(7), 4377 (1994)
Weber A, Nikulski R, Klages CP, Appl. Phys. Lett., 63(3), 325 (1993)
Lee WW, Locke PS, Thin Solid Films, 262(1-2), 39 (1995)
Awaya M, Arita Y, Jap. J. Appl. Phys, 30(8), 1813 (1991)
Zheng B, Eisenbraun ET, Liu J, Kaloyeros AE, Appl. Phys. Lett., 61(18), 2175 (1992)
Fujii T, Koyanagi T, Morofuji K, Kashima T, Matsubara K, Jpn. J. Appl. Phys., 33, 4482 (1994)
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Sakata T, Kawai T, Chem. Phys. Lett., 80, 341 (1981)
Tien TY, Stadler HL, Gibbons EF, Zacmanidis PS, Am. Ceram. Soc. Bull., 54, 280 (1985)
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Okimura K, Shibata A, Jpn. J. Appl. Phys., 36(5A), 2849 (1997)
Kingery WD, Bowen HK, Uhlmann DR, Introduction to Ceramics(2nd ed.)/ John Wiley & Sons, pp.159, 1976 (1976)
O'Hanlon JF, A User's Guide to Vacuum Technology/ John Wiley & Sons, pp.96, 1980 (1980)

[Related Articles]

[1] Shin HK, Shin HJ, Lee JG, Kang SW, Ahn BT, Chem. Mater., 9, 76 (1997)

[2] Eizenberg M, Littau K, Ghanayem S, Mak A, Maeda Y, Chang M, Sinha AK, Appl. Phys. Lett., 65(19), 2416 (1994)

[3] Yun JH, Park MY, Rhee SW, J. Vac. Sci. Technol. A, 16(2), 419 (1998)

[4] Hwang ES, Lee J, J. Vac. Sci. Technol. B, 16(6), 3015 (1998)

[5] Cohen SL, Liehr M, Kasi S, App. Phys. Lett., 60(1), 50 (1992)

[6] Kim S, Park JM, Choi DJ, Thin Solid Films, 320(1), 95 (1998)

[7] Charatan RM, Gross ME, Eaglesham DJ, J. Appl. Phys., 76(7), 4377 (1994)

[8] Weber A, Nikulski R, Klages CP, Appl. Phys. Lett., 63(3), 325 (1993)

[9] Lee WW, Locke PS, Thin Solid Films, 262(1-2), 39 (1995)

[10] Awaya M, Arita Y, Jap. J. Appl. Phys, 30(8), 1813 (1991)

[11] Zheng B, Eisenbraun ET, Liu J, Kaloyeros AE, Appl. Phys. Lett., 61(18), 2175 (1992)

[12] Fujii T, Koyanagi T, Morofuji K, Kashima T, Matsubara K, Jpn. J. Appl. Phys., 33, 4482 (1994)

[13] Brown SC, Basic Data of Plasma Physics/ American Institute oF Physics Press, pp.113, 1994 (1994)

[14] Sakata T, Kawai T, Chem. Phys. Lett., 80, 341 (1981)

[15] Tien TY, Stadler HL, Gibbons EF, Zacmanidis PS, Am. Ceram. Soc. Bull., 54, 280 (1985)

[16] Noufi RN, Kohl PA, Frank SN, Bard AJ, J. Electrochem. Soc., 125, 246 (1978)

[17] Campbell SA, Gilmer DC, Wang XC, Hsieh MT, Kim HS, Gladfelter WL, Yan J, IEEE TRANSACTION ON ELECTRN DEVICES, 44(1), 104 (1997)

[18] Okimura K, Shibata A, Jpn. J. Appl. Phys., 36(5A), 2849 (1997)

[19] Kingery WD, Bowen HK, Uhlmann DR, Introduction to Ceramics(2nd ed.)/ John Wiley & Sons, pp.159, 1976 (1976)

[20] O'Hanlon JF, A User's Guide to Vacuum Technology/ John Wiley & Sons, pp.96, 1980 (1980)