차세대 노광공정용 Ta박막의 0.2μm  미세패턴 식각특성 연구

우상균; 김상훈; 주섭열; 안진호; Sang-Gyun Woo; Sang Hoon Kim; Sup-Youl Ju; Jinho Ahn

Korean Journal of Materials Research, Vol.10, No.12, 819-824, December, 2000

Export Citation

차세대 노광공정용 Ta박막의 0.2μm 미세패턴 식각특성 연구

Study on the Etching Characteristics of 0.2μm fine Pattern of Ta Thin film for Next Generation Lithography Mask

우상균, 김상훈, 주섭열, 안진호

한양대학교 재료공학부

Sang-Gyun Woo, Sang Hoon Kim, Sup-Youl Ju, and Jinho Ahn

Dept. of Materials Engineering, Hanyang University, Korea

초록

본 연구에서는 Electron Cyclotron Resonance plasma etching system 을 이용한 Ta 박막의 미세 식각 특성을 연구하였다. 염소 plasma를 사용하여 microwave power, RF Power, working pressure, gas chemistry 등의 변화에 따른 식각 profile의 영향을 조사하였고, pattern density가 증가함에 따라 발생하는 microloading 현상을 0.2μm 이하의 패턴에서 확인 하였다. 이를 개선하기 위하여 식각 과정을 두 단계로 분리하는 2단계 식각 공정을 수행하였으며 이를 통해 우수한 식각 profile을 얻을 수 있었다.

n this research, the etching characteristics of Ta thin film with chlorine plsama have been studied by Electron Cyclotron Resonance (ECR) plasma etching system. The effects of microwave power, RF bias power, working pressure and gas chemistry on the etching profiles have been investigated. The microloading effect, which was observed at fine pattern formation, was effectively suppressed by double step etching, and anisotropic 0.2μm L&S patterns were successfully generated.

Keywords:plasma etching;microloading effect;microwave power;double step etching;Ar actinometry

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