Er 2 O 3   첨가가 BaTiO 3   계 내환원성 X7R 재질의 유전특성에 미치는 효과

박재성; 황진현; 한영호; J.S. Park; J.H. Hwang; Y.H. Han

Korean Journal of Materials Research, Vol.11, No.1, 44-47, January, 2001

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Er 2 O 3 첨가가 BaTiO 3 계 내환원성 X7R 재질의 유전특성에 미치는 효과

ects of Er 2 O 3 Addition on the Dielectric Properties of Non-reducible BaTiO 3 -based X7R Dielectrics

박재성, 황진현, 한영호

성균관대학교 재료공학과

J.S. Park, J.H. Hwang, and Y.H. Han

Department of Materials Engineering, Sungkyunkwan University, Suwon, 440-746, Korea

초록

Ni 전극을 사용하는 BaTiO 3 계 내환원성 X7R 조성에서 Er 2 O 3 첨가가 유전특성에 미치는 영향에 대하여 환원성 분위기에서 연구하였다. MnO 2 ?MgO 가 첨가된 내환원조성에서 첨가량이 조절된 Er 2 O 3 의 복합첨가로 유전율의 온도안정성이 향상되어 X7R 규격을 만족시켰으며 2,970 이상의 상온 유전상수와 1.0% 이하의 유전손실율이 관찰되었다. Er 2 O 3 가 3.0 mol% 이상으로 과량 첨가되었을 경우 유전체의 온도특성은 향상되었으나 상온 유전상수가 현저히 감소하였다. 다른 첨가조성(1.5 mol% Er 2 O 3 2.0 mol% MgO)이 고정될 때 TCC곡선은 MnO 2 첨가량이 증가함에 따라 시계방향으로 회전하였으며, 온도안정성을 향상시켰다.

Effects of Er 2 O 3 addition on the dielectric properties of non-reducible BaTi 3 -based X7R dielectrics with Ni electrode have been studied in reducing atmosphere. X7R with moderate temperature-dependence was developed after addition of Er 2 O 3 with MnO 2 ?MgO ; room-temperature dielectric constant and dissipation factor were >2900 and Er 2 O 3 greater than 3.0 mol% improved the temperature dependence of dielectric properties, but a significant decrease of the dielectric constant at room-temperature was observed. The TCC curves rebated clockwise with increasing MnO 2 content at a given additive system, 1.5 mol% Er 2 O 3 and 2.0 mol% MgO.

Keywords:Er 2 O 3;X7R;BaTiO 3;Ni electrode;reducing atmosphere

[References]

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[1] Saito H, Chazono H, Kishi H, Yamaoka N, Jpn. J. Appl. Phys., 30(9B), 2307 (1991)

[2] Sakabe Y, Hamaji Y, Nishiyama T, Ferroelectrics, 133, 133 (1992)

[3] Okino Y, Shizuno H, Kusumi S, Kishi H, Jpn. J. Appl. Phys., 33, 5393 (1994)

[4] Kishi H, Okino Y, Honda M, Iguchi Y, Imaeda M, Takahashi Y, Ohasato H, Okuda T, Jpn. J. Appl. Phys., 36, 5954 (1997)

[5] Mizuno Y, Okino Y, Kohzu N, Chazono H, Kishi H, Jpn. J. Appl. Phys., 37, 5227 (1998)

[6] Kishi H, Kohzu N, Sugino J, Ohsato H, Iguchi Y, Okuda T, J. Eur. Ceram. Soc., 19, 1043 (1999)

[7] Kishi H, Kohzu N, Mizuno Y, Iguchi Y, Sugino J, Ohsato H, Okuda T, Jpn. J. Appl. Phys., 38, 5452 (1999)

[8] Nakamura T, Sano H, Konoike T, Tomono K, Jpn. J. Appl. Phys., 38, 5457 (1999)

[9] Rawal BS, Kahn M, Bussem WR, Advances in Ceramics, Vol. 1, pp. 172-188, edited by Levinson LM, the American Ceramic Society, USA, (1981) (1981)

[10] Hennings DFK, Schreinemacher BS, J. Eur. Ceram. Soc., 14, 463 (1994)

[11] Takada K,Chang E, Smyth DM, Advances in Ceramics, Vol. 19, pp. 147-152, edited by Blum IB, and W. R. Cannon, the American Ceramic Society, USA, (1987) (1987)

[12] Takada K, Ichimura H, Smyth DM, Jpn. J. Appl. Phys., 26-2, 42 (1987)

[13] Xue LA, Chen Y, Brook RJ, Mater. Sci. Eng. B, 1, 193 (1988)

[14] Lewis GV, Catlow CRA, J. Phys. Chem. Solids, 47(1), 89 (1986)

[15] Chen J, Gorton A, Chan HM, Harmer MP, J. Am. Caram. Soc., 69(12), C303 (1986)

[16] Belsick JR, Halliyal A, Kumar U, Newnham RE, Am. Ceram. Soc. Bull., 66, 664 (1987)

[17] Burn I, Electro. Sci. Tech., 2, 241 (1976)

[18] Osawa S, Furuzawa A, Fujikawa N, J. Am. Ceram. Soc., 76(5), 1191 (1993)