Korean Journal of Materials Research, Vol.11, No.3, 221-226, March, 2001
사파이어( α - Al 2 O 3 ) 단결정에 있어 basal slip (0001)1/3 전위 Part I : 전위속도
Basal slip (0001)1/3 dislocation in sapphire ( α - Al 2 O 3 ) single crystals Part I: Dislocation velocity
초록
사파이어 ( α - Al 2 O 3 ) 단결정에 있어 basal slip (0001)1/3 의 전위속도를 4점 곡강도를 이용하여, 측정하였다. 이 곡강도는 온도 1200 ? C 에서 1400 ? C 그리고 응력은 90MPa, 120MPa, 160MPa에서 행하여졌다. 전위속도는 4 점굽힘 시편의 굽힘변위속도에 의해 구하여졌다. 얻어진 전위속도를 이용하여 전위속도의 온도 및 응력 의존성에 대해 검토하였다. 전위속도의 온도의존성을 이용하여 basal slip 전위속도를 위한 활성화에너지를 구하였으며, 그 값은 대략 2.2 ± 0.4eV이었다. 한편, 전위속도의 응력의존성을 나타내는 응력지수 m은 2.0 ± 0.2이었다.
The basal slip (0001)1/3 dislocation velocity in sapphire ( α - Al 2 O 3 ) single crystals was measured by four-point bending test. The bending experiment was carried out in the temperature range from 120 0 ? C to 1400 ? C at various engineering stresses 90MPa, 120MPa, and 150MPa. The velocity of such dislocations was estimated from the bending displacement rate of the four-point bend sample. The dependence of temperature and stress in dislocation velocity was investigated. The activation energy for dislocation velocity was determined to be about 2.2 ± 0.4eV. In addition, the stress exponent (m) describing the stress dependence of dislocation velocities was in the range of 2.0 ± 0.2.
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