The MOSFET characterization technique proposed here permits parameter extraction from ultra-short channel single length devices. The technique is based on an improved charge correction which allows extension of the gate overdrive to lower range and leads to better accuracy of extracted quantities such as effective mobility, threshold voltage, and effective parasitic resistance. The method is applicable to both planar and non-planar technologies at highly scaled gate lengths. (C) 2014 Elsevier Ltd. All rights reserved.