A method to characterize the module shunt resistance (Rh) by measuring the module at reverse bias and dark conditions connected to an external parallel resistance is presented. For the purpose of proving this method, two modules, MA and MB, with the same type of cells, but different shunt resistance, were manufactured. The R-sh, values as determined by the proposed method have been compared with those obtained by commercial flash solar simulators and other standard procedures. Additionally, modules MA and MB were measured at different irradiance levels to relate the Rh with the module performance at low irradiance conditions. Finally, in order to evaluate the relative importance of a correct determination of the module RA, a simulation of Annual 'Energy Yield obtained with an installation made with modules MA compared with modules. MB have been carried out by means of PVsyst program. (C) 2014 Elsevier Ltd. All rights reserved.