In-Situ Observation of Anodic-Dissolution Process of P-GaAs(001) in HCl Solution by Surface X-Ray-Diffraction

Uosaki K; Koinuma M; Kondo T; Ye S; Yagi I; Noguchi H; Tamura K; Takeshita K; Matsushita T

Journal of Electroanalytical Chemistry, Vol.429, No.1-2, 13-17, 1997

DOI10.1016/S0022-0728(97)00112-5 Export Citation

In-Situ Observation of Anodic-Dissolution Process of P-GaAs(001) in HCl Solution by Surface X-Ray-Diffraction

Uosaki K, Koinuma M, Kondo T, Ye S, Yagi I, Noguchi H, Tamura K, Takeshita K, Matsushita T

The grazing incidence X-ray diffraction technique has been applied to monitor the anodic dissolution process of GaAs(001) in 0.1M HCl solution. The surface diffraction intensity for the [11] direction of GaAs(001) was clearly observed and it decreased with time when the positive potential was applied to the electrode.

Keywords:ELECTRODE-ELECTROLYTE INTERFACE;N-GAAS;SCATTERING MEASUREMENTS;AU(001) RECONSTRUCTION;GALLIUM-ARSENIDE;P-GAAS;AU(111);REFLECTIVITY;ILLUMINATION;MONOLAYERS