Indium selenide has been prepared by electrodeposition from indium sulphate and selenious acid solutions at 22 and 82 degrees C. The deposits were analysed chemically and the films were characterised by anodic stripping, X-ray diffractometry and optical measurements. The reactions occurring during the process were studied. The formation of In2Se3 occurs via a reduction of Se(IV) into Se(-II), which then reacts with the In3+ ions to give In2Se3. Deposits prepared at 82 degrees C have a better crystallinity than those obtained at 22 degrees C. Optical characterisation of the electrodeposited In2Se3 gives a band gap energy of 1.58 eV. Voltammograms under illumination with the deposits as electrode material show a strong anodic photocurrent characteristic of an n-type semiconductor. Annealing at 390 degrees C under an argon atmosphere increases the photocurrent.