The application of a radiotracer method to in situ studies of the adsorption of thiourea labelled with either C-14 or S-35 nuclides on smooth n-type and p-type Si (100) electrodes and on rough p-Si electrodes is described. The adsorption takes place over the whole potential range studied, i.e. -0.5 to 1.2 V. It was found that during the interaction of thiourea with the silicon surface, two different products are formed. The dependence of the surface concentration of the adsorbates on the electrode potential and on the bulk concentration of thiourea was determined. Two different species are proposed to be present on the electrode surface as a result of surface processes : physically adsorbed thiourea molecules and sulphur atoms which are chemically bonded to the surface. Different activities of smooth and rough silicon electrodes towards the adsorption of thiourea were demonstrated.