Transparent p-type amorphous Cu1-xCrxO2-delta thin films were grown on the glass substrate by RF magnetron co-sputtering at room temperature. Structural, optical and electrical properties of these films were studied as a function of chromium content in the film. Composition of Cu1-xCrxO2-delta thin films could be varied by tuning the RF power to Cr sputtering target. Bandgap of as deposited Cu1-xCrxO2-delta thin films varies from 2.8 eV to 2.1 eV as chromium content increases in the film. The bottom gate structured TFTs fabricated using p-type Cu1-xCrxO2-delta operated in enhancement mode with an on-off ratio of 10(4) and field effect mobility 0.3 cm(2) V-1 s(-1). (C) 2014 Elsevier B.V. All rights reserved.