MOS 소자용 Silicon Carbide의 열산화막 생성 및 특징

오경영; 이계홍; 장성주; K.Y. Oh; K.H. Lee; S.J. Jong

Korean Journal of Materials Research, Vol.12, No.5, 327-333, May, 2002

DOI10.3740/MRSK.2002.12.5.327 Export Citation

MOS 소자용 Silicon Carbide의 열산화막 생성 및 특징

Characteristics and Formation of Thermal Oxidative Film Silicon Carbide for MOS Devices

오경영^†, 이계홍, 장성주¹

동신대학교 공과대학 세라믹공학과
¹동신대학교 대학원 물리과

K.Y. Oh^†, K.H. Lee, and S.J. Jong

Department of Ceramics, College of Engineering, Dongshin University, Korea

E-mail:

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was 1100 ? C ~130 0 ? C by O 2 and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at 1150 ? C and 1200?C for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

Keywords:SiC;thermal oxidation;sacrifice oxidation

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[1] Matsunami HI, Electronics and Communications in Japan. Part 2., 81(7), 38 (1998)

[2] Ventra M, Pantelides ST, J. Electronic materials., 26(3), 353 (2000)

[3] Eickhoff M, Vouroutzis N, Nielsen A, Krotz G, Stoemenos J, J. Electrochem. Soc., 148(6), G336 (2001)

[4] Opila EF, J. Am. Ceram. Soc., 82(3), 625 (1999)

[5] Yamashita K, Iwamoto M, Hino T, Jpn. J. Appl. Phsy., 20(8), 1429 (1981)

[6] Nauta PK, Hillen MW, J. Appl. Phys., 49(5), 2862 (1978)

[7] Tangena AG, Middelhoek J, de Rooij NF, Jpn. J. Appl. Phys., 49(5), 2876 (1978)

[8] Yamashita K, Hino T, Jpn. J. Appl. Phys., 21(10), 1437 (1982)

[9] Goetzberger A, Irvin JC, IEEE. Trans. Electron Devices., 15, 1009 (1968)

[10] Goldman EI, Zhdan AG, Kukharsksya NF, semicconductors., 33(3), 308 (1999)

[11] Bakowski M, Gustafsson U, Ovuka Z, Microelectron. Reliab., 38(3), 381 (1998)

[12] Kobayashi H, Sakurai T, Nishiyama M, Nishioka Y, Appl. phys. Let., 76(16), 2336 (2001)

[13] Jaeger RC, Introduction to Microelectronic Fabrication Volume V, P. 29

[14] Deal BE, Grove AS, J. Appl. Phys., 36, 3770 (1965)

[15] Rys A, Singh N, Cameron M, J. Electrochem. Soc., 142(4), 1318 (1995)

[16] Inter-university Semiconductor Research Center, SEOUL NATIONAL UNIVERSITY.

[17] Suzuki A, Ashida H, Furui N, Jpn. J. Appl. Phys., 21(4), 579 (1982)

[18] Anthony powell J, Larkin DJ, ABEL PB, J. Electronic Materials., 24(4), 295 (1995)

[19] Johnson MB, Zvanut ME, Fichardson O, J. Electron. Mater., 29(3), 368 (2000)

[20] Lipkin LA, Palmour JW, J. Electronic Materials., 25(5), 909 (1995)

[21] Das MK, Cooper JA, JR, Melloch MR, J. Electron. Mater., 27(4), 353 (1998)

[22] Zhou L, Audurier V, Pirouz P, Powell JA, J. Electrochem. Soc., 144(6), L161 (1997)

[23] Boo J, Lee S, Yu K, Sung M, Kim Y, Surf. Coat. Technol., 131, 147 (2000)