Ta 2 O 5 고유전박막의 미세조직과 열적안정성

민석홍; 정병길; 최재호; 김병성; 김대용; 신동우; 조성래; 김기범; Seok-Hong Min; Byung-Gil Jung; Jae-Ho Choi; Byoung-Sung Kim; Dae-Yong Kim; Dong-Woo Shin; Sung-Lae Cho; Ki-Bum Kim

Korean Journal of Materials Research, Vol.12, No.10, 814-819, October, 2002

DOI10.3740/MRSK.2002.12.10.814 Export Citation

Ta 2 O 5 고유전박막의 미세조직과 열적안정성

Microstructure and Thermal Stability of High Permittivity Ta 2 O 5

민석홍 ^†, 정병길, 최재호, 김병성¹, 김대용¹, 신동우¹, 조성래¹, 김기범¹

강릉대학교 금속재료공학과
¹서울대학교 재료공학부

Seok-Hong Min^†, Byung-Gil Jung, Jae-Ho Choi, Byoung-Sung Kim¹, Dae-Yong Kim¹, Dong-Woo Shin¹, Sung-Lae Cho¹, and Ki-Bum Kim¹

Dept. of Metal and Materials Engineering, Kangnung National University, Gangneung, 210-702, Korea
¹School of Materials Science and Engineering, Seoul National Univeristy, Seoul 151-742, Korea

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TiN and TaN films as electrode materials of reactive sputtered Ta 2 O 5 were prepared by sputtering to compare their thermal stabilities with Ta 2 O 5 The microstructural change of Ta 2 O 5 films with annealing was also investigated. As- deposited Ta 2 O 5 film on SiO 2 was amorphous and annealing of 80 0 ? C for 30 min made it transform to β -Ta 2 O 5 crystalline which contains amorphous particles with the size of a few nm. Crystallization temperature of Ta 2 Ta_2 O_{5}onTaNishigherthanthatonTiNelectrode.TheinterfacebetweenTaNandTa _2O _{5}maintainedstablyevenaftervacuumannealingupto 800^{\circ}Cfor1hr,butTiNinteractedwith Ta_2 _O{5}andsointerdiffusionbetweenTiNand Ta_2 O_{5}occurredbyvacuumannealingof80 0^{\circ}Cfor1hr.ItindicatesthatTaNisthermallymorestablewith Ta_2 O_{5}$ than TiN.N.

Keywords:Ta 2 O 5;TiN;TaN;thermal stability

[References]

Ramesh R, Thin Film Ferroelectric Materials and Devices, Kluwer Academic Publishers, 2 (1997)
May TC, Woods MH, IEEE Trans. Electron Devices, ED-26, 2 (1979)
Laviale D, Oberlin JC, Devine RA, Appl. Phys. Lett., 65(16), 2021 (1994)
Aoyama T, Saida S, Okayama Y, Fujisaki M, Imai K, Arikado T, J. Electrochem. Soc., 143(3), 977 (1996)
Kamiyama S, Saeki T, Mori H, Numasawa Y, IEEE IEDM Tech. Dig., 827 (1991)
Kamiyama S, Lesaicherre PY, Suzuki H, Sakai A, Nishiyama I, Ishitani A, J. of the Electrochemical Society, 140(6), 1617 (1993)
Shinriki H, Nakata M, IEEE Trans. Electron Devices, 38(3), 455 (1991)
Shinriki H, Nakata M, Nishioka Y, Mukai K, IEEE Electron Devices Lett, 10(11), 514 (1989)
Kamiyama S, Suzuki H, Watanabe H, Sakai A, Kimura H, Mizuki J, J. Electrochem. Soc., 141(5), 1246 (1994)
Nishioka Y, Shinriki H, Mukai K, J. Appl. Phys., 61(6), 2335 (1987)
Saitoh M, Mori T, Tamura H, IEEE IEDM Tech. Dig., 680 (1986)
Matsuhashi H, Nishikawa S, Jpn. J. Appl. Phys., 33(3A), 1293 (1994)
Chang JP, Steigerwald ML, Fleming RM, Opila RL, Alers GB, Appl. Phys. Lett., 74(24), 3705 (1999)
Chang PH, Liu HY, Chang PH, Liu HY, Thin solid film, 258, 56 (1995)
Atanassova E, Dimitrova T, Koprinarova J, Appl. Surf. Sci., 84, 193 (1995)
Pignolet A, Rao GM, Krupanidhi SB, Thin Solid Films, 258(1-2), 230 (1995)
Lee HJ, Sinclair R, Lee MB, Lee HD, J. Appl. Phys., 83(1), 139 (1998)
Ishibashi K, Patnaik BK, Parikh NR, Sandhu GS, Fazan PC, J. Vac. Sci. Technol. B, 12(4), 2822 (1994)
Dimitrova T, Arshak K, Atanassova E, Thin Solid Films, 381(1), 31 (2001)

[Related Articles]

[1] Ramesh R, Thin Film Ferroelectric Materials and Devices, Kluwer Academic Publishers, 2 (1997)

[2] May TC, Woods MH, IEEE Trans. Electron Devices, ED-26, 2 (1979)

[3] Laviale D, Oberlin JC, Devine RA, Appl. Phys. Lett., 65(16), 2021 (1994)

[4] Aoyama T, Saida S, Okayama Y, Fujisaki M, Imai K, Arikado T, J. Electrochem. Soc., 143(3), 977 (1996)

[5] Kamiyama S, Saeki T, Mori H, Numasawa Y, IEEE IEDM Tech. Dig., 827 (1991)

[6] Kamiyama S, Lesaicherre PY, Suzuki H, Sakai A, Nishiyama I, Ishitani A, J. of the Electrochemical Society, 140(6), 1617 (1993)

[7] Shinriki H, Nakata M, IEEE Trans. Electron Devices, 38(3), 455 (1991)

[8] Shinriki H, Nakata M, Nishioka Y, Mukai K, IEEE Electron Devices Lett, 10(11), 514 (1989)

[9] Kamiyama S, Suzuki H, Watanabe H, Sakai A, Kimura H, Mizuki J, J. Electrochem. Soc., 141(5), 1246 (1994)

[10] Nishioka Y, Shinriki H, Mukai K, J. Appl. Phys., 61(6), 2335 (1987)

[11] Saitoh M, Mori T, Tamura H, IEEE IEDM Tech. Dig., 680 (1986)

[12] Matsuhashi H, Nishikawa S, Jpn. J. Appl. Phys., 33(3A), 1293 (1994)

[13] Chang JP, Steigerwald ML, Fleming RM, Opila RL, Alers GB, Appl. Phys. Lett., 74(24), 3705 (1999)

[14] Chang PH, Liu HY, Chang PH, Liu HY, Thin solid film, 258, 56 (1995)

[15] Atanassova E, Dimitrova T, Koprinarova J, Appl. Surf. Sci., 84, 193 (1995)

[16] Pignolet A, Rao GM, Krupanidhi SB, Thin Solid Films, 258(1-2), 230 (1995)

[17] Lee HJ, Sinclair R, Lee MB, Lee HD, J. Appl. Phys., 83(1), 139 (1998)

[18] Ishibashi K, Patnaik BK, Parikh NR, Sandhu GS, Fazan PC, J. Vac. Sci. Technol. B, 12(4), 2822 (1994)

[19] Dimitrova T, Arshak K, Atanassova E, Thin Solid Films, 381(1), 31 (2001)