티타늄과 코발트 박막의 산화규소 스페이서에 대한 열적안정성

정성희; 송오성; 김민성; Seong Hwee Cheong; Oh Sung Song; Min Sung Kim

Korean Journal of Materials Research, Vol.12, No.11, 865-869, November, 2002

DOI10.3740/MRSK.2002.12.11.865 Export Citation

티타늄과 코발트 박막의 산화규소 스페이서에 대한 열적안정성

Thermal Stability of Titanium and Cobalt Thin Films on Silicon Oxide Spacer

정성희^†, 송오성 , 김민성¹

서울시립대학교 신소재공학과
¹동명정보대학교 정보통신공학과

Seong Hwee Cheong^†, Oh Sung Song , and Min Sung Kim¹

Department of Materials Sciecne and Engineering, The University of Seoul, 90 Cheonnong-dong, Tongdaemun-gu, 130-743, Seoul, Korea
¹Department of Information and Communications Engineering, School of Information Engineering, 535 Yongdang-dong, Nam-gu, 608-711, Busan, Korea

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We investigated the reaction stability of titanium, cobalt and their bilayer films with side-wall spacer materials of SiO 2 for the salicide process. We prepared Ti 350 \AA , Co 150 \AA , Co 150 \AA /Ti 100 \AA and Ti 100 \AA /Co 150 \AA films on 1000 \AA -thick thermally grown SiO 2 substrates, respectively. Then the samples were rapid thermal annealed at the temperatures of 500 ? C , 600 ? C , and 700 ? C for 20 seconds. We characterized the sheet resistance of the metallic layers with a four-point probe, surface roughness with scanning probe microscope, residual phases with an Auger depth profilometer, phase identification with a X-ray diffractometer, and cross-sectional microstructure evolution with a transmission electron microscope, respectively. We report that Ti reacted with silicon dioxide spacers above 700 ? C , Co agglomerated at 600 ? C , and Co/Ti, Ti/Co formed CoTi compound requiring a special wet process.

Keywords:cobalt;titanium;Co/Ti bilayers;salicide;thermal stability;spacers

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Hong F, Patnaik BK, Li BZ, Liu P, Sun Z, Rozgonyi GA, MRS Spring, 311 (1993)
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Fang H, Ozturk MC, Seebauer EG, Batchelor DE, J. Electrochem. Soc., 146(11), 4240 (1999)
Hsia SL, Tan TY, J. Appl. Phys., 72(5) (1992)
Lasky JB, Nakos JS, Cain OJ, Geiss PJ, IEEE Transactions on Electron Devices, 38, 262 (1991)
Gambino JP, Colgan EG, Domenicucci AG, Cunningham B, J. Electrochem. Soc., 145(4) (1998)
Ahn YS, Song OS, Korean J. Mater. Res., 11(2), 71 (2001)
Morga AE, Broadbent EK, Ritz KN, Sadana DK, Burrow BJ, J. Appl. Phys., 64, 344 (1988)
Ting CY, Wittmer M, lyer SS, Brodsky SB, J. Electrochem. Soc., 131, 2934 (1984)
Krooshof GJP, Habraken FHPM, van der Weg WF, Van den hovw L, Maex K, De Keersmaecker RF, J. Appl. Phys., 63, 5110 (1988)

[Related Articles]

[1] Tung RT, Applied Surface Science, 117-118, 268 (1997)

[2] Zhang H, Poole J, Eller R, Keefe M, J. Vac. Sci. Technol. A, 17(4), 1904 (1999)

[3] Wolf S, Silicon Processing for the VLSI era, Lattice Press. (1995) (1995)

[4] Sze M, VLSI Technology, Johy Wiley & Sons (1988) (1988)

[5] Sze SM, Semiconductor Devices, McGraw-Hill (1985) (1985)

[6] Osburn CM, Tsai JY, Sun J, J. Electron Material, 25, 1725 (1996)

[7] Chen J, Colinge JP, Flandre D, Gillon R, Raskin JP, Vanhoenacker D, J. Electrochem. Soc., 144(7) (1997)

[8] Sun JJ, Tsai JY, Osburn CM, IEEE Transactions on Electron Devices, 45(9), 1946 (1998)

[9] TUNG RT, MRS Spring (1996)

[10] Hong F, Patnaik BK, Li BZ, Liu P, Sun Z, Rozgonyi GA, MRS Spring, 311 (1993)

[11] Lutze J, Scott G, Manley M, IEEE Electron Device Letters, 21(4), 155 (2000)

[12] Fang H, Ozturk MC, Seebauer EG, Batchelor DE, J. Electrochem. Soc., 146(11), 4240 (1999)

[13] Hsia SL, Tan TY, J. Appl. Phys., 72(5) (1992)

[14] Lasky JB, Nakos JS, Cain OJ, Geiss PJ, IEEE Transactions on Electron Devices, 38, 262 (1991)

[15] Gambino JP, Colgan EG, Domenicucci AG, Cunningham B, J. Electrochem. Soc., 145(4) (1998)

[16] Ahn YS, Song OS, Korean J. Mater. Res., 11(2), 71 (2001)

[17] Morga AE, Broadbent EK, Ritz KN, Sadana DK, Burrow BJ, J. Appl. Phys., 64, 344 (1988)

[18] Ting CY, Wittmer M, lyer SS, Brodsky SB, J. Electrochem. Soc., 131, 2934 (1984)

[19] Krooshof GJP, Habraken FHPM, van der Weg WF, Van den hovw L, Maex K, De Keersmaecker RF, J. Appl. Phys., 63, 5110 (1988)