Metal-Ferroelectric-Metal(MFM) capacitors were prepared using Bi 3.3 La 0.7 Ti 3 O 12 (BLT) ferroelectric thin films which were spin coated on Pt/Ti/SiO 2 /Si substrates by the Sol-Gel method. BLT thin films annealed at above 650 ? C showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from 650 ? C to 700 ? C . In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= Pr + +Pr ?) and leakage current of the BLT film annealed at 650 ? C were about 29.3 μ C/cm 2 and 2.3 \times10 ?8 A/cm 2 at 3V. There were no distinct changes in the retention charges after 10 10 polarization switching cycles, showing good fatigue property of the annealed BLT films.