다양한 박막층을 채용한 코발트실리사이드의 물성

정성희; 송오성; Seong Hwee Cheong; Oh Sung Song

Korean Journal of Materials Research, Vol.13, No.5, 279-284, May, 2003

DOI10.3740/MRSK.2003.13.5.279 Export Citation

다양한 박막층을 채용한 코발트실리사이드의 물성

Characteristics of Cobalt Silicide by Various Film Structures

정성희^†, 송오성

서울시립대학교 신소재공학과

Seong Hwee Cheong^†, and Oh Sung Song

Department of Materials Science and Engineering, The University of Seoul, Tongdaemun-gu, 130-743, Seoul, Korea

E-mail:

The CoSi 2 process is widely employed in a salicide as well as an ohmic layer process. In this experiment, we investigated the characteristics of CoSi 2 films by combinations of I-type (TiN 100 \AA /Co 150 \AA ), II-type(TiN 100 \AA /Co 150 \AA /Ti 50 \AA ), III-type(Ti 100 \AA /Co 150 \AA /Ti 50 \AA ), and IV-type(Ti 100 \AA /Co 150 \AA /Ti 100 \AA ). Sheet resistances of CoSi 2 show the lowest resistance with 2.9 Ω /sq. in a TiN/Co condition and much higher resistances in conditions simultaneously applying Ti capping layers and Ti interlayers. Though we couldn't observe a CoSi 2 roughness dependence on the film stacks from RMS values, Ti capping layers turned into 78∼94 \AA thick TiN layers of (200) preferred orientation at N 2 ambient. In addition, Ti interlayers helped to form the epitaxial CoSi 2 with (200) preferred orientation and ternary compounds of Co-Ti-Si. We propose that film structures of II-type and III-type may be appropriate in the salicide process and the ohmic layer process from the viewpoint of Co diffusion kinetics and the CoSi 2 epitaxy.

Keywords:cobalt silicide;interlayers;capping layers;ohmic layer;TiN;Ti;salicide

[References]

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Ting CY, Wittmer M, Iyer SS, Brodsky SB, J. Electrochem. Soc., 131, 2934 (1984)
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Tung RT, MRS Symp. Proc., 427, 481 (1996)
Dass MLA, Fraser DB, Wei CS, Appl. Phys. Lett., 58, 1308 (1991)
Chen YP, Dixit GA, Lu JP, Hsu WY, Konecni AJ, Luttmer JD, Havemann RH, Thin Solid Films, 320(1), 73 (1998)
Sohn DK, Park JS, Lee BH, Bae JU, Byun JS, Kim JJ, Appl. Phys. Lett., 73, 2302 (1998)
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Lauwers A, Wang QF, Deweerdt B, Maex K, Appl. Surf. Sci., 91, 12 (1995)
Kim GB, Baik HK, Appl. Phys. Lett., 69, 3498 (1996)
Kang TS, Je JH, Appl. Phys. Lett., 80, 1361 (2002)
Chen J, Colinge JP, Flandre D, Gillon R, Raskin JP, Vanhoenacker D, J. Electrochem. Soc., 144(7), 2437 (1997)
Tung RT, Appl. Surf. Sci., 117-118, 268 (1997)
Zhang H, Poole J, Eller R, Keefe M, J. Vac. Sci. Technol. A, 17(4), 1904 (1999)
Adams DP, Yalisove SM, Eaglesham DJ, J. Appl. Phys., 76, 5190 (1994)
Kang TS, Je JH, Kim GB, Baik HK, Lee SM, J. Vac. Sci. Technol. B, 18(4), 1953 (2000)

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[2] Prokop J, Zybill CE, Veprek S, Thin Solid Films, 359(1), 39 (2000)

[3] Detavernier C, Van Meirhaeghe RL, Cardon F, J. Appl. Phys., 88, 133 (2000)

[4] Osburn CM, Tsai JY, Sun J, J. Electron Material, 25, 1725 (1996)

[5] Kittl JA, Hong QZ, Thin Solid Films, 320(1), 110 (1998)

[6] Morgan AE, Broadbent EK, Ritz KN, Sadana DK, Burow BJ, J. Appl. Phys., 64, 344 (1988)

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[9] Lutze J, Scott G, Manley M, IEEE Electron Device Lett., 21(4), 155 (2000)

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[11] Ahn YS, Song OS, J. Mater. Res., 11, 71 (2001)

[12] Tung RT, MRS Symp. Proc., 427, 481 (1996)

[13] Dass MLA, Fraser DB, Wei CS, Appl. Phys. Lett., 58, 1308 (1991)

[14] Chen YP, Dixit GA, Lu JP, Hsu WY, Konecni AJ, Luttmer JD, Havemann RH, Thin Solid Films, 320(1), 73 (1998)

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[17] Lauwers A, Wang QF, Deweerdt B, Maex K, Appl. Surf. Sci., 91, 12 (1995)

[18] Kim GB, Baik HK, Appl. Phys. Lett., 69, 3498 (1996)

[19] Kang TS, Je JH, Appl. Phys. Lett., 80, 1361 (2002)

[20] Chen J, Colinge JP, Flandre D, Gillon R, Raskin JP, Vanhoenacker D, J. Electrochem. Soc., 144(7), 2437 (1997)

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[23] Adams DP, Yalisove SM, Eaglesham DJ, J. Appl. Phys., 76, 5190 (1994)

[24] Kang TS, Je JH, Kim GB, Baik HK, Lee SM, J. Vac. Sci. Technol. B, 18(4), 1953 (2000)