단일 공정에 의한 고효율 단일모드 반도체 레이저 구조 제작을 위한 고밀도 양자 나노구조 형성

손창식; 백종협; 김성일; 박용주; 김용태; 최훈상; 최인훈; Chang-Sik Son; Jong-Hyeob Baek; Seong-Il Kim; Young-Ju Park; Yong-Tae Kim; Hoon-Sang Choi; In-Hoon Choi

Korean Journal of Materials Research, Vol.13, No.8, 485-490, August, 2003

DOI10.3740/MRSK.2003.13.8.485 Export Citation

단일 공정에 의한 고효율 단일모드 반도체 레이저 구조 제작을 위한 고밀도 양자 나노구조 형성

High-Density Quantum Nanostructure for Single Mode Distributed Feedback Semiconductor Lasers by One-Step Growth

손창식^†, 백종협¹, 김성일², 박용주², 김용태², 최훈상³, 최인훈³

신라대학교 광전자공학과
¹한국광기술원
²한국과학기술연구원
³고려대학교 재료공학과

Chang-Sik Son^†, Jong-Hyeob Baek¹, Seong-Il Kim², Young-Ju Park², Yong-Tae Kim², Hoon-Sang Choi³, and In-Hoon Choi³

Department of Photonics, Silla University, Busan 617-736, Korea
¹KOPTI, Gwangju 500-210, Korea
²Semiconductor Materials Laboratory, KIST, Seoul 130-650, Korea
³Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea

E-mail:

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 μm thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

Keywords:submicron grating;GaAs;MOCVD;holography;e-beam lithography

[References]

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Constantin C, Martinet E, Rudra A, Leifer K, Lelarge F, Biasiol G, Kapon E, J. Crystal Growth, 207, 161 (1999)
Son CS, Kim SI, Kim Y, Park YK, Kim EK, Min SK, Choi IH, J. Appl. Phys., 82, 1205 (1997)
Son CS, Park YK, Kim SI, Kim Y, Kim EK, Min SK, Choi IH, Jpn. J. Appl. Phys., 37, 1701 (1998)
Colas E, Simhony S, Kapon E, Bhat R, Hwang DM, Lin PSD, Appl. Phys. Lett., 57, 914 (1990)
York PK, Connolly JC, Hughes NA, Zamerowski TJ, Abeles JH, Kirk JB, McGinn JT, Murphy KB, J. Crystal Growth, 124, 709 (1992)
Sogawa T, Ando S, Kanbe H, Appl. Phys. Lett., 64, 472 (1994)
Kim TG, Kim EK, Min SK, Park JH, Appl. Phys. Lett., 69, 955 (1996)
Nagai H, Noguchi Y, Matsuoka T, J. Crystal Growth, 71, 225 (1985)
Schilling M, Wunstel K, Appl. Phys. Lett., 49, 710 (1986)
Kojima K, Misunaga K, Kyuma K, Appl. Phys. Lett., 56, 154 (1990)
Koui T, Sakata Y, Sasaki Y, Matsumoto T, Komatsu K, J. Crystal Growth, 195, 503 (1998)

[1] Demeester P, Vermeire G, Vermaerke F, Moerman I, Van Daele P, Gustafsson A, Samuelson L, Berger V, Weisbuch C, Low Dimensional Structures Prepared by Epitaxial Growth or Patterned Substrates, NOTO ASI series, 298, 253 (1989) (1989)

[2] Inoguchi K, Kudo H, Sugahara S, Ito S, Yagi H, Takiguchi H, Jpn. J. Appl. Phys., 33, 852 (1994)

[3] Earles T, Mawst LJ, Botez D, Appl. Phys. Lett., 73, 2072 (1998)

[4] Constantin C, Martinet E, Rudra A, Leifer K, Lelarge F, Biasiol G, Kapon E, J. Crystal Growth, 207, 161 (1999)

[5] Son CS, Kim SI, Kim Y, Park YK, Kim EK, Min SK, Choi IH, J. Appl. Phys., 82, 1205 (1997)

[6] Son CS, Park YK, Kim SI, Kim Y, Kim EK, Min SK, Choi IH, Jpn. J. Appl. Phys., 37, 1701 (1998)

[7] Colas E, Simhony S, Kapon E, Bhat R, Hwang DM, Lin PSD, Appl. Phys. Lett., 57, 914 (1990)

[8] York PK, Connolly JC, Hughes NA, Zamerowski TJ, Abeles JH, Kirk JB, McGinn JT, Murphy KB, J. Crystal Growth, 124, 709 (1992)

[9] Sogawa T, Ando S, Kanbe H, Appl. Phys. Lett., 64, 472 (1994)

[10] Kim TG, Kim EK, Min SK, Park JH, Appl. Phys. Lett., 69, 955 (1996)

[11] Nagai H, Noguchi Y, Matsuoka T, J. Crystal Growth, 71, 225 (1985)

[12] Schilling M, Wunstel K, Appl. Phys. Lett., 49, 710 (1986)

[13] Kojima K, Misunaga K, Kyuma K, Appl. Phys. Lett., 56, 154 (1990)

[14] Koui T, Sakata Y, Sasaki Y, Matsumoto T, Komatsu K, J. Crystal Growth, 195, 503 (1998)