BCl 3 기반의 혼합가스들을 이용한 InP 고밀도 유도결합 플라즈마 식각

조관식; 임완태; 백인규; 이제원; 전민현; Guan Sik Cho; Wantae Lim; InKyoo Baek; Jewon Lee; Minhyun Jeon

Korean Journal of Materials Research, Vol.13, No.12, 775-778, December, 2003

DOI10.3740/MRSK.2003.13.12.775 Export Citation

BCl 3 기반의 혼합가스들을 이용한 InP 고밀도 유도결합 플라즈마 식각

High Density Inductively Coupled Plasma Etching of InP in BCl 3 -Based Chemistries

조관식, 임완태, 백인규, 이제원^†, 전민현

인제대학교 나노공학부/나노기술 응용연구소

Guan Sik Cho, Wantae Lim, InKyoo Baek, Jewon Lee^†, and Minhyun Jeon

School of Nano Engineering, Inje University / Institute for Nanotechnology Applications, Gimhae, Gyungnam, 621-749, Korea

E-mail:

We studied InP etching in high density planar inductively coupled BCl 3 and BCl 3 /Ar plasmas(PICP). The investigated process parameters were PICP source power, RIE chuck power, chamber pressure and BCl 3 /Ar gas composition. It was found that increase of PICP source power and RIE chuck power increased etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness \AA /min) after the planar BCl 3 /Ar ICP etching. It may make it possible to open a new regime of InP etching with CH 4 H 2 -free plasma chemistry. Some amount of Ar addition (

Keywords:ICP;Dry Etching;InP;HDPICP;BCl 3

[References]

Kim HS, Yeom GY, Lee JW, Kim TI, Thin Solid Films, 341(1-2), 180 (1999)
Lee BT, Park CH, Kim SD, Kim HS, J. Korean Vacuum Society, 8(4), 541 (1999)
Diniz JA, Swart JW, Jung KB, Hong J, Pearton SJ, Solid-State Electronics, 42(11), 1947 (1998)
Lee JW, Abernathy CR, Pearton SJ, Ren F, Hobson WS, Shul RJ, Constantine C, Barratt C, J. Electrochem. Soc., 144(4), 1417 (1997)
Hong J, Lee JW, Abernathy CR, Lambers ES, Pearton SJ, Shul RJ, Hobson WS, J. Vac. Sci. Technol. A, 16(3), 1497 (1998)
Lee JW, Lambers ES, Abernathy CR, Pearton SJ, Shul RJ, Ren F, Hobson WS, Constantine C, Solid-State Electron., 42 (1998)
Jung PG, Lim WT, Cho GS, Jeon MH, Lim JY, Lee JW, Cho KS, J. Korean Vacuum Society
B.H.O, Jung JS, Park SG, Surf. Coat. Technol., 120-121, 752 (1999)
Lee JW, Hays D, Abernathy CR, Pearton SJ, Hobson WS, Constantine C, J. Electrochem. Soc., 144(9), L245 (1997)
Lee JW, Shu RJ, Vawer GA, Abernathy CR, Pearton SJ, Hahn YB, Jpn. J. Appl. Phys., 42(38) (2003)
Kang HG, Lim SH, Im YH, Hahn YB, Hwang JS, Han BY, J. Korean Institute of Electrical and Electronic Material Engineers, 14(2), 158 (2001)
Maeda T, Lee JW, Shu RJ, Han J, Hong J, Lembers ES, Pearton SJ, Abernathy CR, Hobson WS, Appl. Surface Science, 143, 174 (1999)
Hahn YB, Hays DC, Cho H, Jung KB, Abernathy CR, Pearon SJ, Shul RJ, Applied Surface Science, 147 (1999)
Lim WT, Baek IK, Jung PG, Lee JW, Cho GS, Lee JI, Cho KS, Pearton SJ, Korean J. Materials Research, 13(4), 266 (2003)
Baek IK, Lim WT, Yoo SR, Lee JW, Jeon MH, Park WW, Cho GS, Pearton SJ, J. Kor. Inst. Surf. Eng., 36(4), 334 (2003)

[1] Kim HS, Yeom GY, Lee JW, Kim TI, Thin Solid Films, 341(1-2), 180 (1999)

[2] Lee BT, Park CH, Kim SD, Kim HS, J. Korean Vacuum Society, 8(4), 541 (1999)

[3] Diniz JA, Swart JW, Jung KB, Hong J, Pearton SJ, Solid-State Electronics, 42(11), 1947 (1998)

[4] Lee JW, Abernathy CR, Pearton SJ, Ren F, Hobson WS, Shul RJ, Constantine C, Barratt C, J. Electrochem. Soc., 144(4), 1417 (1997)

[5] Hong J, Lee JW, Abernathy CR, Lambers ES, Pearton SJ, Shul RJ, Hobson WS, J. Vac. Sci. Technol. A, 16(3), 1497 (1998)

[6] Lee JW, Lambers ES, Abernathy CR, Pearton SJ, Shul RJ, Ren F, Hobson WS, Constantine C, Solid-State Electron., 42 (1998)

[7] Jung PG, Lim WT, Cho GS, Jeon MH, Lim JY, Lee JW, Cho KS, J. Korean Vacuum Society

[8] B.H.O, Jung JS, Park SG, Surf. Coat. Technol., 120-121, 752 (1999)

[9] Lee JW, Hays D, Abernathy CR, Pearton SJ, Hobson WS, Constantine C, J. Electrochem. Soc., 144(9), L245 (1997)

[10] Lee JW, Shu RJ, Vawer GA, Abernathy CR, Pearton SJ, Hahn YB, Jpn. J. Appl. Phys., 42(38) (2003)

[11] Kang HG, Lim SH, Im YH, Hahn YB, Hwang JS, Han BY, J. Korean Institute of Electrical and Electronic Material Engineers, 14(2), 158 (2001)

[12] Maeda T, Lee JW, Shu RJ, Han J, Hong J, Lembers ES, Pearton SJ, Abernathy CR, Hobson WS, Appl. Surface Science, 143, 174 (1999)

[13] Hahn YB, Hays DC, Cho H, Jung KB, Abernathy CR, Pearon SJ, Shul RJ, Applied Surface Science, 147 (1999)

[14] Lim WT, Baek IK, Jung PG, Lee JW, Cho GS, Lee JI, Cho KS, Pearton SJ, Korean J. Materials Research, 13(4), 266 (2003)

[15] Baek IK, Lim WT, Yoo SR, Lee JW, Jeon MH, Park WW, Cho GS, Pearton SJ, J. Kor. Inst. Surf. Eng., 36(4), 334 (2003)